Power Semiconductors Forum

Today, power devices span multiple device architecture types. They are produced on a variety of wafer sizes and leverage multiple material sets including silicon, silicon carbide and gallium nitride, to name a few. As device power ranges, breakdown voltages, switching speeds and drive currents increase, the manufacturing of devices becomes more complex. Additionally, the accuracy with which each processing step is conducted plays a vital role in ensuring the performance metrics are met, further ensuring overall device reliability and lifetime. This Power Semiconductors Forum will highlight a few of the challenges faced by device manufacturers during the production of silicon based super-junction MOSFETs, silicon carbide MOSFETs and, finally, gallium nitride HEMT (high electron mobility transistors).  In doing so, the forum offers fab managers, process engineers, and tool owners the opportunity to learn, discuss and share practical knowledge about process control technologies specific to power semiconductor devices.

The Power Semiconductors Forum presents innovative solutions for wafering, process and packaging challenges facing power device manufacturers today.

Registration for the Power Semiconductors Forum has now closed.

Solving Metrology and Inspection Challenges for Next Generation Power Semiconductor Technologies. A technology symposium presented by Onto Innovation.