Series Overview
Element G2 System
The Element G2 system is designed for wafer suppliers to perform high speed impurity mapping and epi thickness measurements. It combines transmission and reflection based technology and when paired with advanced IR modeling capability, it offers a unique approach to dielectric composition and film thickness monitoring. With improved sensitivity and cutting-edge algorithms, the Element G2 system is a critical metrology tool widely used for monitoring dielectrics such as BPSG, FSG, H in SiN, and more. Machine learning helps eliminate the need for monitor wafers in dielectric measurement.
The system features a crisp 2mm circular IR spot, a high sensitivity interferometer and advanced pattern recognition. Equipped with a Class 1, five-axis dual-arm edge grip wafer handling system, the Element G2 system delivers high precision and high throughput, even at the edge of the wafer.
Element S System
The Element S system is designed for the specialty market, specifically the smaller 100mm to 200mm wafer sizes used in the rapidly growing SiC power device market. Building on the success of the Element Fourier transform infrared (FTIR) system, the Element S system can accurately measure thickness and free carrier concentrations in epitaxial layers up to five layers, thereby enabling the characterization of thick epitaxial films necessary for next-generation SiC power devices which require thick epi layers for higher standoff voltage. With a small spot size, the Element S system can conduct measurements up to the very edge of the wafer to maximize die yield and enable even more productivity as power device customers transition to 200mm wafers.
Applications
- Epi layer thickness
- Transition zone thickness
- Epi and substrate resistivity
- Power device
- Bulk resistivity
- Edge exclusion
- Interstitial oxygen and substitutional carbon
- BPSG – boron and phosphorus content of BPSG layers
- FSG – Fluorine content of FSG
- SiN – Measures hydrogen in silicon nitride films
- HSQ – Hydroxyl and hydrogen content in oxides SOG, FOX
- SiON – Oxygen, nitrogen and hydrogen in SiON
- SiCN – Carbon in SiCN
- SiOC – Carbon in SiOC
- Oxygen dose – Measurement of oxygen implant dose at SIMOX process
- Oxygen precipitate – Measurement of oxygen precipitates in Si substrates