Implant Process Monitoring with PULSE Technology

Ion implantation is the process of achieving localized doping by implanting the dopant atoms ballistically, as ions.  It is an integral part of semiconductor manufacturing. As device scaling continues, the complexity of chips has grown and so has the number of implant steps. Implant process qualification requires tight wafer-to-wafer and lot-to-lot control. Commonly used species in Si semiconductor manufacturing include B, P, and As. In the rapidly growing SiC power device market, room temperature implant results in high density of defects and thus requires hot implant, often carried out at 500°C-1000°C temperatures. Also, Al and N are preferred dopant species. In this presentation, we provide results from the successful application of Picosecond Ultrasonic technique for implant process monitoring of various dopant species in Si and SiC substrates. The design-of-experiment skew consisted of samples under different tilt/energy/dose, and temperature skews.