High Sensitivity & Throughput Defect Inspection Technologies for SiC and GaN Power Technologies

With the demand for power device technologies is growing across a broad variety of applications, device makers are developing production solutions leveraging multiple new material sets including Silicon Carbide (SiC), Gallium Nitride (GaN) and others. Growth in demand has driven wafer size migrations, 150mm-to-200mm and 200mm-to-300mm for SiC and GaN, respectively. These wafer size migrations have an impact on the incumbent process control technology’s ability deliver increased sensitivity defect detection technologies, while offering higher throughput than currently available on smaller wafer sizes and maintain relative cost parity in what is a very cost sensitive application space. This presentation addresses a few of the more fundamental challenges that can occur in the production of SiC and GaN based devices at these larger wafer sizes and explores solutions for the more critical process steps, including some novel and value adding hardware and software capabilities.