As more high aspect ratio processes are used in multiple industry segments, there are metrology needs for monitoring of related processes, including dimensions and properties of carbon film hard masks and etched 3D structures. 

The MBIR system delivers high-throughput, low COO, non-contact, non-destructive measurements of dimensions and uniformity of layers and etched structures used in integrated circuit manufacturing. The small spot size makes the tool suitable for measurements of scribe line test structures as in-line process control. The unique technology and analysis capability simplifies system calibration requirements and removes the effect of substrate variations for key layer measurements.  

While the software contains advanced features for measurement recipe and analysis model creation, it has a user-friendly interface and implementation that allows the fab customers to create and manage the recipe system for MBIR tool fleets. 

Thickness map from amorphous carbon film

The CnCV system utilizes a novel constant surface potential corona charging, which enables the precision required over a large voltage range. The patented technology includes charge- and photo-assisted modes, especially suited for speed and precision on WBG materials and structures, including SiC, Ga2O3, GaN, and AlGaN/GaN HEMT. Additionally, Corona-Kelvin characterization includes electrical properties of dielectrics and interfaces of films on SiC and GaN epi layers. An automated top-side edge contact (TSEC) is also available enabling characterization of WBG on insulating/semi-insulating substrates. Automated bias-temperature stress (BTS) measurements are also available with the CnCV system, providing a fast, noncontact way to quantify the reliability of passivated SiC and GaN. 

Beyond typical CV type parameters, the full wafer corona approach allows for QUAD (quality, uniformity, and defect) mapping. The electrical defect imaging, QUAD-EDI, mode is especially designed for SiC. It provides a unique means for quick screening of epi electrical defectivity enabling improvement in device yield prediction. 

Figure 1. QUAD-EDI Map on final metallized device wafer after Merged Schottky PiN diode fabrication identifying failed dies.

Onto Innovation’s OCD technology offers powerful modeling and computing packages to support various phases of film and OCD measurement setup, data management, and fleet management. These capabilities include model building, runtime data analysis, system calibration, data analytics, data connectivity and management, spectrum management and fleet matching.

Onto OCD solutions consist of several modeling and computing components, including Ai Diffract^™ modeling software, runtime onboard computer, offline modeler, offline model building clusters, and recipe & data management server. Each component seamlessly extends OCD capabilities to Onto’s standalone and integrated metrology systems, providing end-to-end capabilities from offline recipe support and development to fab-wide networking and connectivity for easy fleet management.

Learn more about each component below.

The PrimaScan system utilizes laser scatterometry and imaging techniques leveraging proprietary optics and sensing technologies for reliable inspection of nanometer sized defects on a variety of opaque and transparent/semi-transparent substrates suitable for either R&D or high-volume manufacturing environments. With multiple detection channels, the system can detect, measure, characterize and image surface particles, scratches, pits, bumps, surface contamination, film or bulk wafer stress, voids/inclusions, including chips and cracks at the wafer edge.

The PrimaScan system addresses challenges in both incoming wafer quality control and in inline process monitoring. Capable of handling multiple substrate materials, it uniquely addresses inline process defect and contamination monitoring in wafer-based production environments.

Designed with versatility in mind the PrimaScan system can handle a variety of wafer sizes and substrate types

The IVS 380 is an optical overlay, CD & z-height metrology system designed for high volume manufacturing, with SMIF (200mm substrate) or FOUP (300mm substrate) load ports compatibility. It handles various substrates for advanced packaging, including Si, glass and CCL, and accommodates sizes of 200mm and 300mm.

Building on the IVS family’s 40 years of experience in CMOS, MEMS and compound semiconductor applications, the IVS 380 system possesses the versatility to tackle overlay, CD and z-height measurements for diverse substrates and layers. It measures critical dimensions in the xy plane and the vertical z-heights of features like RDL metal lines, posts and bumps. The optics enable focus on mostly transparent materials such as photoresists and rough surfaces such as electroplated copper.

The IVS 280 system has been designed for ultimate precision, tool induced shift (TIS) and throughput for 100mm to 200mm wafers, with a mean time between failure (MTBF) > 2,000 hours. The IVS 280 system provides the same capability in a system designed for overhead track handling with full capability per SEMI® standards.

Flexibility is key in compound semiconductor processes, accommodating various wafer sizes, thicknesses, and compositions, including versatile wafer handling for Si, SiC, quartz, glass, GaAs, GaN, and LiNO3 wafers.

Its robust wafer handling and navigation system requires no operator assistance during recipe execution. The IVS 280 system enables wafer size changes without hardware alterations. Recipes and data remain stable over time. The system also supports recipe transfers from older IVS platforms like the IVS 200 and IVS 220.

The demonstrated capabilities of the IVS system to perform with high precision and solid reliability set this system apart.