Enabling In-Line Process Control for Hybrid Bonding Applications

Multi-layer thin films are deposited to control post-CMP topography, and accurate measurement of pre- and post-CMP films is essential for effective CMP control.

High-precision pre- and post-CMP multi-layer stack measurement with dynamic repeatability for robust CMP process control.

Accurate Cu recess measurement remains a key metrology challenge. Although atomic force microscopy (AFM) is commonly used in R&D for its precision, its low throughput and contamination risk limit its applicability in high-volume manufacturing.

Optical critical dimension (OCD) metrology offers a non-contact, high-throughput solution for Cu recess measurement, delivering high accuracy, precision, and strong correlation to AFM results—making it well-suited for high-volume manufacturing.

Edge trimming is a critical process in wafer-to-wafer hybrid bonding, required to remove knife-shaped edges formed during wafer thinning. Without precise control, improper edge profiles can lead to chipping and delamination during wafer-to-wafer the bonding process.

Our long-range metrology sensor enables accurate step height measurement for edge trim profile characterization, capturing both depth (Z) and width (X) around the wafer edge. This non-contact solution provides the precision needed to monitor and control edge trim profiles, helping ensure reliability in hybrid bonding processes.

Surface particles pose a significant challenge in hybrid bonding, as they can lead to void formation at the bond interface. Characterizing these particles is essential for identifying defect sources and optimizing the bonding process to ensure yield and reliability.

Multiple integrated 3D metrology sensors enable precise particle height measurement, supporting either full-wafer inspection or sampling. This flexible capability provides critical data for wafer-to-wafer bonding quality and helps identify defect sources for process optimization.

Bonded wafer thickness uniformity directly influences the mechanical strength and structural integrity of the bonded stack during downstream processing. Variations in thickness and the presence of edge defects not only compromise bonding quality but also increase the risk of yield loss and reliability issues.

High-precision metrology for total and individual wafer thickness in multi-stacked bonded wafers, combined with automated edge inspection to detect defects and assess bonding quality, helps to ensure structural integrity and yield in hybrid bonding processes.

Die cracks can occur during the pick-and-place process in die-to-wafer (D2W) bonding and during final die sawing. Undetected cracks at any layer in a multi-die D2W stack compromise device reliability and yield, making early and accurate crack detection essential.

High speed infrared inspection enables inner die crack detection with 100% full wafer coverage at high throughput. Its flexible, multi-resolution imaging design helps to ensure reliable crack identification across all layers in the D2W process.