It’s no secret the cloud is a driving force powering the digital transformation. However, cloud adoption is rarely a one-size-fits-all operation. Even when done correctly, it can bring about company-wide transformations unique to each organization. At the very core, the move to the cloud is akin to a culture change, and understanding these changes can make the transition successful. The following factors are worth considering:

Business strategy

Your cloud journey should start with company buy in, a budget and a roadmap with clear objectives, outcomes and performance metrics. The objectives need to be realizable and long-term. Having the right stakeholders involved helps keep initiatives going in the organization and ensures that the effort is not done in a siloed manner. Milestones, playbacks, celebrating successes and recognizing failures transparently is extremely important. Having the ability to change the organizational design to best leverage a transition is also necessary.

Choosing a platform

Plenty of providers can help you realize what best fits your organization. The key, however, is to know the strengths and weaknesses of each platform. While a relocation from one provider to another is possible, you generally are in partnership with a provider for the long haul. Remember, you are not just provisioning resources — it’s about data, data-lifecycle, applications, leveraging services, cost, building up expertise and other factors.

A recent study shows the radio frequency (RF) filter market growing steadily by nearly $16 billion from 2019 to 2024 at a compound annual growth rate (CAGR) of approximately 20%, according to Technavio. The strong growth in the RF filter market is driven by the increased adoption of 5G technology, the surge in smartphones using 5G, and commercial and consumer devices dependent on internet of things (IoT) applications. Together, these factors are some of the most significant players driving society’s digital transformation.

However, the RF filter market is faced with many of the same challenges the semiconductor industry as a whole is experiencing, including the need to pack more into increasingly smaller spaces. In each successive generation of RF filters, the number of filters has not only steadily increased, the rising number of filters has led to a need for more stringent process monitoring and control. A frequency accuracy, 3σ of 0.1%, requires film thickness control within the same accuracy or better.

Let’s look at one RF filter component, a bulk acoustic wave (BAW) resonator. A BAW is a piezoelectric structure sandwiched between the top and bottom electrodes. The resonant frequency depends on the acoustic velocity and the thickness of the piezoelectric film, and the thickness of the electrode. The thickness of the top electrode as a mass loading layer can be dialed in to generate a frequency shift, which is often used to form a filter passband.

Since the RF filter process is directly correlated to thickness, extremely uniform films (~0.1% or better) need to be deposited. With the additional requirements of 5G to support higher frequencies and increased bandwidth, RF filter device manufacturers employ several different process knobs to tune the devices. For example, we see an increasing trend toward thinner layers to support higher frequencies, the adoption of Sc-doped piezoelectric materials to improve piezoelectric coupling and the addition of temperature compensation SiO2 layers to the stack to improve the temperature coefficient of the resonator.

Picosecond Ultrasonics (PULSE Technology) has been widely adopted as the tool-of-record for metal film thickness metrology in semiconductor fabs around the world. It provides unique advantages, such as being a rapid, non-contact, non-destructive technology, and has capabilities for simultaneous multiple layer measurement. In this paper, we describe the unique advantages of Picosecond Ultrasonics for advanced radio frequency (RF) applications. RF filter process control requires stringent metrology due to tight process tolerances.  The first principles-based PULSE technology does not require external calibration standards and provides robust measurement capability for multi-layer thickness measurements.  For advanced RF applications, the capability of PULSE technology to measure both velocity and thickness simultaneously for transparent and semi-transparent films offers a lot of potential for not only monitoring processes but offers insight into the device performance. The PULSE technique can also simultaneously measure full stack for multilayer metal stack measurements with excellent repeatability and long-term stability which makes process control more efficient and reliable. Fast throughput makes it possible for a high sampling rate for RF applications which is the key for device level process control and yield improvement.

The global RF semiconductor market size is growing rapidly at a CAGR of 8.5% in the next five years from 17.4 billion in 2020 to 26.2 billion USD in 2025. The rollout of 5G technology and its enabled Internet of Things (IoT) are the main driving force for this growth. Each 5G device   requires up to 100 filters to make sure each band is isolated to avoid interference that will drain battery life, reduce data speeds, and cause dropped calls. RF filters are becoming more and more critical for all signal process applications. 5G devices require Bulk Acoustic Wave (BAW) filters which can work better at higher frequencies. With more and more filters to fit into a device, the size of filters is also shrinking dramatically in three dimensions. These advances in filter technology place stringent demands on manufacturing which in turn requires accurate and precise metrology techniques. Both thickness and acoustic properties of the piezoelectric layer determine the frequency response of filters. Thickness accuracy and uniformity requirements for the films are beyond what process tools can offer at deposition and there are several options available to achieve such tight controls post-deposition. Metrology techniques employed for characterizing these properties must meet the sensitivity, accuracy, and stringent repeatability requirements. The thickness of the full stack and especially the thickness and sound velocity of the piezoelectric layer are key to realizing the extremely tight process control of frequency accuracy (3σ) of 0.1% or better. A high sampling rate on a hundred-micron level device is needed to make sure all devices across the wafer can meet the requirements which require fast throughput with a small measurement probe.

 

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Analysts are projecting strong growth in advanced packaging, with CAGR through 2026 approaching 7% across the segment; much higher for certain high-end technologies, including 3D stacking, embedded die, and fan-out. Outsourced assembly and test (OSAT) firms, which package finished die manufactured by independent device manufacturers (IDM) and foundries, will be challenged by the complexity of the advanced packaging processes and will face stiff competition, in many cases from their own customers. If they are to thrive, or perhaps just survive, they will need to embrace smarter manufacturing approaches.

The historical division between front-end device manufacturing and back-end packaging/testing is the result of their vastly different cost structures and process complexity. The relative simplicity of the back-end process led OSATs to compete primarily on price, seeking always to minimize costs and maximize volume. Simple processes were simple to control. The acquisition, storage, and analysis of process data were costs to be avoided wherever possible. Advanced packaging processes have introduced a host of new variables that must be controlled to ensure process yield and product reliability.  Process data is no longer a cost to be avoided, but should be considered an essential asset to be leveraged to maximize profitability.

Meanwhile, as they accommodate increasingly complex processes, OSATs confront encroachment in their markets by sophisticated competitors who may also be their customers – IDMs and foundries who have outsourced a significant portion of their production to OSATs but have also maintained their own internal back-end capabilities. Advanced packaging processes have been described as the migration of front-end like processes to traditionally back-end applications. With this evolution, the advantage device manufacturers once had, by outsourcing assembly and test to avoid diluting their expertise with low-value processes, has greatly diminished. More importantly, these customers-turned-competitors are already comfortable with managing complex processes – they wrote the book. In addition to IDMs and foundries, substrate and printed circuit board (PCB) suppliers, electronic manufacturing services (EMS), original design manufacturers (ODM), and others see the opportunity presented by the significant growth forecasted for advanced packaging.

Data is the life blood of smarter manufacturing – acquiring it, storing it, organizing it, analyzing it, sharing it. Without leveraging it you are not just blind; in the competitive environment of semiconductor manufacturing, you will probably not survive. OSATs are not new to data collection and management. After all, testing is part of their name. But test data is product/function focused. In its simplest form it is go/no go. Functional testing may go beyond that, to measure how well it works, if for no other reason than to identify the best devices and sell them for premium prices. Smarter manufacturing requires data on a whole new scale – data that is both deep and broad.

Picosecond Ultrasonics (PULSE Technology) has been widely used in thin metal film metrology because of its unique advantages, such as being a rapid, non-contact, non-destructive technology and its capabilities for simultaneous multiple layer measurement. Measuring velocity and thickness simultaneously for transparent and semi-transparent films offers a lot of potential for not only monitoring process but offers insight into the device performance. In this paper, we show Picosecond Ultrasonics provides a complete metrology solution in advanced radio frequency (RF) applications. This includes measurement of various thin metal films for wide thickness ranges with extremely excellent repeatability which could meet stringent process control requirements, simultaneous multilayer measurement capability, and simultaneous measurement of sound velocity and thickness for piezoelectric films which play a key role in the performance of RF devices.