Echo™ System
The Echo system utilizes picosecond ultrasonics to provide accurate, in-line, on-product metrology and materials characterization for semiconductor processes requiring metal thickness metrology, implant monitoring or thermal conductivity characterization on product wafers.
Product Overview
The Echo system is a comprehensive in-line metal film metrology tool designed for single and multi-layer metal film measurements in leading-edge logic, memory, advanced packaging and specialty semiconductor devices. Its innovative optics design extends the dynamic range for film thickness measurement from 50Å to 35µm on a single platform and offers extendibility to measure high aspect ratio advanced 3D NAND structures. The Expert Applications System (EASy™) software provides flexibility for developing user-defined algorithms to model complex multi-layer stacks.
The Echo system’s capabilities have been extended to include materials characterization. In addition to measuring the Young’s Modulus of low-k dielectric films in BEOL and amorphous carbon hard masks in 3D NAND, the Echo system includes proprietary electronics and algorithms for implant monitoring and thermal conductivity characterization. Its small spot size, combined with rapid measurements, enables full wafer mapping capabilities with 0.5mm edge exclusion, improving time to yield.
Applications
- Gate metals, plug/contact, barrier/seed layers, top metal
- RF electrode/IDT
- Advanced packaging UBM, RDL
- 3D NAND Hard mask
- MEMS Poly/Ge
- Low-k, ultra low-k film modulus, implant, thermal conductivity
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Atlas® V System
The Atlas V system is an OCD and thin film metrology tool for high volume manufacturing, enabling FinFET & Gate-All-Around (GAA) logic, DRAM, and 3D NAND device process control.
Product Overview
The Atlas V system combines state of the art optical design with an innovative Ai Diffract™ modeling engine, providing OCD and thin film metrology solutions for measuring complex 3D device structures. The dual channel optical architecture consists of a DUV 4×4 Mueller Matrix (MM) SE and a DUV polarized normal incident reflectometer (NIOCD). Together, they provide rich information for OCD analysis at high precision and high throughput. The Atlas V system is designed to measure the most critical and challenging process steps that include buried features, not visible by CD-SEM and other techniques.
With unique capabilities, such as measuring individual nanowire dimension in a GAA logic device, the Atlas V system is an enabling technology for leading edge device process control.
Applications
- OCD for litho, etch, CVD & CMP process in all device segments
- Local variation
- Asymmetry and tilt
- Common and critical films
- Stress & wafer warpage
Intelligent Line Monitoring & Control with Integrated Metrology
Enhance CMP process control with a connected metrology approach that feeds forward data from standalone OCD or films metrology to integrated metrology, connected through AI-driven analytical software. This approach, powered by advanced modeling and analysis tools, can deliver high-precision, high-throughput results—minimizing or eliminating the need for and cost of new TEM data and enabling accelerated time to solution, faster excursion detection, reduced cost and improved Cpk.
Enhancing CMP Process Control with Intelligent Line Monitoring & Integrated Metrology
As semiconductor manufacturers push the boundaries of performance and functionality—driven by high-performance computing and AI applications—chemical mechanical planarization (CMP) processes increase in intensity complexity. New logic transistor designs, 3D NAND stacking, and DRAM integration introduce more CMP layers and tighter process windows.
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Aspect® System
The Aspect System is a revolutionary in-line, non-destructive infrared optical critical dimension (IRCD) system measuring Z-dimension profiling of high aspect ratio structures to enable critical process control. It meets the needs of leading-edge customers with its high speed and process coverage.
Product Overview
As the semiconductor industry relentlessly pursues density and power scaling, more and more high aspect ratio (HAR) processes are used across multiple device segments, especially in advanced memory such as 3D NAND and 3D DRAM. The Aspect metrology system was designed with these ongoing architectures and scaling strategies in mind. Aspect metrology has demonstrated superior performance across multiple customer devices through a unique proprietary IRCD system that provides full profiling capability to enable critical process control, with the speed and process coverage that customers require.
The Aspect system is powered by a software analysis engine, Ai Diffract™, that provides up to 90% faster time to solution which extends the industry leading NanoDiffract® software by leveraging extensive machine learning capabilities along with high fidelity modeling. The result is a simultaneous improvement in metrology performance along with a significant time to solution reduction.
Applications
- Etch, cleans, and deposition for 3D NAND
- Etch, cleans, and deposition for 2D and 3D DRAM
- Deep trench etch and doping for CIS
- Deep Trench etch in Power Devices
- On-device materials characterization for EPI process
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Hybrid Bonding Process Control Solution
Hybrid bonding enables ultra-dense 3D memory interconnects with up to 1,000x more connections than microbumps. Achieving high yield requires stringent process control, including monitoring topography and detecting particles, cracks and voids. Measuring dishing in copper pads provides valuable insight into surface conditions. Together, these process control insights contribute to improved device reliability and performance.
Enabling In-Line Process Control for Hybrid Bonding Applications
As demand grows for high-performance computing (HPC) and AI-driven applications, manufacturers are turning to hybrid bonding to enable the ultra-dense 3D integration required for next-generation chip architectures. This advanced packaging technology presents significant process challenges. Surface preparation must be precisely controlled to eliminate particles, excess recess, and copper pad dishing, all of which can compromise bond quality. During pre-annealing, particle-induced gaps and wide bonding gaps can prevent proper wafer contact. Post-annealing, the formation of dielectric and metal voids introduces further risks to electrical performance and long-term reliability.
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PrecisionWoRx® VX4 System
The PrecisionWoRx VX4 System is designed to provide accurate and repeatable performance through enhanced testing of the latest probe card technologies with tighter pitches, smaller pads and higher pin counts.
Product Overview
The PrecisionWoRx VX4 System gives test facilities and probe card manufacturers the ability to confidently test tighter pitches and smaller probe tips. The system can be configured to meet specific requirements for a variety of probe card technologies. For processes using cards with very small probe tips, the system’s high-resolution optics deliver a detailed field-of-view for high accuracy and repeatability. Proprietary image-processing recipes control over 30 imaging parameters for enhanced testing of most probe tip geometries in use today.
The PrecisionWoRx VX4 System improves overall cost of ownership with faster test times for common tests, including leakage, planarity, alignment, contact resistance, probe force and wire checker. Its sophisticated electrical discharge management capability maintains 1-volt continuity to the probe during electrical testing. Productivity-enhanced routines for automated testing of failed probes and a wide variety of checkplates suit an extensive range of process and technology requirements. The system provides support for the most complex probe card technologies.
Applications
- Various probe tips from 5 µm up to 250 µm diameter
- Z force up to 200 KG
- Pin counts >100,000 probes
- Direct dock probe card capabilities
- Probe card relay and solid-state switching
- Membrane probe cards
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Celero™ PL System
The Celero PL system is designed for subsurface defect inspection and classification for silicon carbide (SiC) and gallium nitride (GaN) based wafers and compound semiconductor materials.
Product Overview
The Celero PL system utilizes a laser-based phase detection and imaging capability that leverages custom optics and image processing algorithms to enable best in class throughput and sensitivity for silicon carbide and gallium nitride-based materials on 100mm to 300mm wafer sizes. Leveraging multiple light sources and sensor channels, the system can detect, measure and image a broad variety of subsurface crystalline defects, associated with bulk wafers and epitaxial layers, surface particles, scratches, pits, surface contamination, stains, point or bulk wafer stress, voids/inclusions, including chips and cracks at the edge of the wafer.
Applications
- Frontside / backside / edge / subsurface defectivity and contamination
- Crystalline defectivity in III-V substrates and epitaxial layers
- Thick wafer / seed wafer surface and sub-surface defectivity
- Substrate-to-epitaxial layer defect mapping (sub-defect mapping)
- Wafer based microLED / VCSEL / EE laser materials
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PrimaScan™ P System
The PrimaScan P System provides all-surface defect and contamination inspection with imaging capability for glass panel substrates.
Product Overview
As panel-level-packaging (PLP) transition from copper-clad laminates (CCL) to glass, the industry must adapt to ensure starting substrates are free of killer defects and contamination or latent defects that may result in yield loss or scrapped panels at later stages in the process flow. The PrimaScan P system is specifically designed to address incoming glass panel quality control for both the advanced IC substrate (AICS) and fan-out panel level processing (FOPLP) segments.
The PrimaScan P system delivers unique laser-based scanning and imaging via proprietary optics and sensing technologies for the reliable inspection of nanometer sized defects for either R&D or high-volume manufacturing environments. Utilizing multiple channel inspection technologies, the system can detect, measure and image surface particles, scratches, pits, surface contamination, stains, film or bulk panel stress, voids/inclusions, including chips and cracks at the edge of the panel.
Applications
- Incoming unpatterned glass panel quality inspection
- Blanket photoresist, dielectric or metallic coated panels
- Buried defects and voids in transparent and semi-transparent blanket films
- Across panel stress and induced point stress
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