For years, many in the semiconductor industry have focused on the march toward advanced nodes. As these nodes have decreased in size, the size of input/output (I/O) bumps on the chip has grown smaller. As these bumps shrink, their ability to mate directly to printed circuit boards (PCB) diminishes, which, in turn, leads to the need for an intermediary substrate. Enter the advanced IC substrate (AICS).

The use of AICS also enables advances in panel-level packaging and the rise of chiplet-based architectures, where the final product is an assembled composite of multiple die supporting the core central processing unit (CPU) or graphics processing unit (GPU). These additional die may be memory elements, analog devices or other functions. All these die can be co-packaged on the AICS, which allows multiple die with small I/O contacts to be assembled and redistributes them to larger contact bumps compatible with a PCB.

With panel-level packaging, manufacturers can deliver packages offering faster data transfer, greater heat dissipation, less power consumption and increased functionality. And unlike the front-end where higher resolution involves ever smaller patterns, package sizes are only increasing in size.

Not so long ago, Blu-ray was hailed as a technological advancement in the world of digital video. But in the streaming era, Blu-ray’s luster has faded. However, the technology responsible for the blue laser diode that gave the Blu-ray player its name – gallium nitride (GaN) – is emerging as one of a number of exciting new developments in the semiconductor industry.

Today, GaN is used by the military for radar systems, consumer and automotive electronics as a super-fast power charger and the telecommunications industry in base stations and data servers. GaN offers several advantages over silicon. For starters, GaN offers a significant increase in electron mobility over silicon – 1,000 times more electron mobility, according to various articles – a benefit that leads to other advantages. In addition, GaN is resistant to heat, consumes less energy than other semiconductors, operates at a lower voltage, enables increased miniaturization, offers wider bandwidth and allows for increased electron mobility.

A mother steps on the brakes, bringing her car to a stop as she drops her kids off for dance lessons. At the time, she doesn’t notice anything wrong, but when she takes her car in for its regular service appointment, the mechanic conducts a diagnostic check and discovers that the primary brake system on the car had failed because of a faulty braking controller without anyone realizing it. Fortunately, the car was able to stop successfully due to the vehicle’s system redundancies, and the dealer’s diagnostic test confirms that since that first chip failure, another one has not occurred. The braking systems are behaving normally.

Following that, the dealership sends the information about the braking failure to the manufacturer, where an analyst notes that over the last 60 days, and around the country, six other brake failures traced back to the same controller system have been reported for the same make and model. In each of these situations, the backup system successfully brought each car to a complete stop. And, as in the case with the mother who dropped her kids off at dance class, the analyst looks at the reporting samples for these six other failures and determines that each is isolated and non-recurring.

For high-performance computing, artificial intelligence, and data centers, the path ahead is certain, but with it comes a change in substrate format and processing requirements. Instead of relying on the quest for the next technology node to bring about future device performance gains, manufacturers are charting a future based increasingly on heterogeneous integration.

But while heterogeneous integration promises more functionality, faster data transfer, and lower power consumption, these chiplet combinations, with different functionalities and nodes, will require increasingly larger packages, with sizes at 75mm x 75mm, 150mm x 150mm, or even larger.

To further complicate matters, these packages will also feature elevated numbers of redistribution layers, in some cases as high as 24 layers. And with each of those layers, the threat of a single killer defect, which would effectively ruin an entire package, increases. As such, the ability to maintain high yields becomes increasingly difficult.

The More than Moore era is upon us, as manufacturers increasingly turn to back-end advances to meet the next-generation device performance gains of today and tomorrow. In the advanced packaging space, heterogeneous integration is one tool helping accomplish these gains by combining multiple silicon nodes and designs inside one package.

But as with any technology, heterogeneous integration, and the fan-out panel-level packaging that often enables it, comes with its own set of unique challenges. For starters, package sizes are expected to grow significantly due to the number of components making up each integrated package. The problem: these significantly bigger packages require multiple exposure shots to complete the lithography steps for the package. Adding to this, multiple redistribution layers (RDL) may cause stress to both the surface and inside of the substrate, resulting in warpage. And then there is the matter of tightening resolution requirements and more stringent overlay needs.

As logic and memory semiconductor devices approach the limits of Moore’s Law, the requirements for accuracy in layer transfer become increasingly stringent. One leading silicon wafer manufacturer estimates that 50% of epitaxial wafer supply for logic will be on nodes equal to or less than 7nm. This is up approximately 30% from earlier in the decade.

To meet the demands of extreme ultraviolet (EUV) lithography, these leading-edge epi-deposited substrates have tighter specifications than previous substrates. Consider 3-5nm logic nodes: the image placement requirement can be as low as 3nm [1].

With the more stringent requirements of EUV lithography in mind, wafer makers are searching for new solutions, such as those addressing the primary reason for inaccuracies in image transfer: macro defects.