All great voyages must come to an end. Such is the case with our series on the challenges facing the manufacturing of advanced IC substrates (AICS), the glue holding the heterogeneous integration ship together.

In our first blog, we examined how cumulative overlay drift from individual redistribution layers could significantly increase overall trace length, resulting in higher interconnect resistance, parasitic effects and poor performance for high-speed and high-frequency applications. To address this, layer to layer overlay performance data needs to be monitored at each layer. If the total overlay error exceeds specifications at any process step, and at any location on the panel, corrective action must be taken to mitigate the drift in total overlay.

For this second installment, we explored the issue of AICS package yield and its importance in fostering a cost-effective, production-worthy process. Unlike most fan-out panel-level packaging (FOPLP) applications, AICS has relatively few packages per panel. This enormous disparity impacts yield calculations dramatically. In the AICS production process, the main challenge is the real-time tracking of yield for every panel, at every layer, throughout the fab. The solution: using advanced automatic defect classification (ADC) and yield analytics to quickly address errors.

In this final article of the series, we explore how overlay correction solutions compensate for panel distortion effects induced by copper clad laminate (CCL) processing, which impacts yield and final package performance.

With the continued advancement of environmental, social and governance goals, corporations are increasingly focused on reducing their carbon footprints. To accomplish this, these companies are being asked to operate their businesses more efficiently than ever before, whether the matter is reducing waste, water usage or power consumption. This is true for the semiconductor industry as well.

Although semiconductor manufacturing is not a smokestack industry, it is truly amazing just how many resources – from water to materials and electricity – goes into making chips. To better understand the carbon footprint and environmental impact a typical fab has, consider this: based on estimates in a 2021 article in The Guardian, a 1% improvement in a factory’s production capability could save that factory 450 tons of waste, 37 million gallons of fresh wafer and 22.5 million kilowatt-hours of electricity over the course of a year. That small 1% change is a substantial reduction in resources used, one that not only makes operations managers happy but ESG-minded stockholders as well.

No matter how you get your news, it seems like everyone is talking about AI – and it’s either going to usher in a new era of productivity or lead to the end of humankind itself. Regardless, the AI era is here, and it’s just beginning to have an impact on our lives, our jobs and our future.

To meet the rigorous demands of AI – along with high-performance compute, 5G and electric vehicles – the semiconductor industry is seeking out new innovations to increase speed, bandwidth and functional density, lower energy usage, cost and latency. At the top of the list: heterogeneous integration. And to make heterogeneous integration a reality, back-end packaging houses use advanced integrated circuit substrates (AICS).

In a previous blog, we focused on one of the major challenges of manufacturing AICS – total overlay drift. For this second installment in our three-part series on packaging solutions, we explore the issue of AICS package yield and its importance in fostering a cost-effective, production-worthy process.

Packaging is becoming more and more challenging and costly. Whether the reason is substrate shortages or the increased complexity of packages themselves, outsourced semiconductor assembly and test (OSAT) houses have to spend more money, more time and more resources on assembly and testing. As such, one of the more important challenges facing OSATs today is managing die that pass testing at the fab level but fail during the final package test.

But first, let’s take a step back in the process and talk about the front-end. A semiconductor fab will produce hundreds of wafers per week, and these wafers are verified by product testing programs. The ones that pass are sent to an OSAT for packaging and final testing. Any units that fail at the final testing stage are discarded, and the money and time spent at the OSAT dicing, packaging and testing the failed units is wasted (figure 1).

For years, many in the semiconductor industry have focused on the march toward advanced nodes. As these nodes have decreased in size, the size of input/output (I/O) bumps on the chip has grown smaller. As these bumps shrink, their ability to mate directly to printed circuit boards (PCB) diminishes, which, in turn, leads to the need for an intermediary substrate. Enter the advanced IC substrate (AICS).

The use of AICS also enables advances in panel-level packaging and the rise of chiplet-based architectures, where the final product is an assembled composite of multiple die supporting the core central processing unit (CPU) or graphics processing unit (GPU). These additional die may be memory elements, analog devices or other functions. All these die can be co-packaged on the AICS, which allows multiple die with small I/O contacts to be assembled and redistributes them to larger contact bumps compatible with a PCB.

With panel-level packaging, manufacturers can deliver packages offering faster data transfer, greater heat dissipation, less power consumption and increased functionality. And unlike the front-end where higher resolution involves ever smaller patterns, package sizes are only increasing in size.

Not so long ago, Blu-ray was hailed as a technological advancement in the world of digital video. But in the streaming era, Blu-ray’s luster has faded. However, the technology responsible for the blue laser diode that gave the Blu-ray player its name – gallium nitride (GaN) – is emerging as one of a number of exciting new developments in the semiconductor industry.

Today, GaN is used by the military for radar systems, consumer and automotive electronics as a super-fast power charger and the telecommunications industry in base stations and data servers. GaN offers several advantages over silicon. For starters, GaN offers a significant increase in electron mobility over silicon – 1,000 times more electron mobility, according to various articles – a benefit that leads to other advantages. In addition, GaN is resistant to heat, consumes less energy than other semiconductors, operates at a lower voltage, enables increased miniaturization, offers wider bandwidth and allows for increased electron mobility.