Atlas® III+ System
The Atlas III+ system provides dependable OCD and thin film metrology for established technologies, with flexible performance across a wide range of process layers and device types.

Product Overview
The Atlas III+ system is a widely adopted inline OCD metrology system, known for its robust and reliable solutions across all OCD and film layers from FEOL to BEOL. With its information-rich optical architecture, powerful OCD and machine learning analysis engine, the Atlas III+ system excels in advanced logic, 3D NAND and DRAM device processes. Extending metrology performance to sub-angstrom precision and accuracy levels, this system enables advanced process control across a broad range of applications in high volume manufacturing. The Atlas III+ system incorporates a proprietary spectroscopic reflectometry and spectroscopic ellipsometry solution, and when combined with Onto Innovation’s Ai Diffract™ OCD analysis software, it enables process control of every critical manufacturing unit operation. Users can gain insights into complex structure profiles across etch, clean, deposition and CMP steps.
Applications
- 3D-NAND
- DRAM: Logic and Foundry
- Specialty: CIS, AR/VR, Power & RF etc.
Intelligent Line Monitoring & Control with Integrated Metrology
Enhance CMP process control with a connected metrology approach that feeds forward data from standalone OCD or films metrology to integrated metrology, connected through AI-driven analytical software. This approach, powered by advanced modeling and analysis tools, can deliver high-precision, high-throughput results—minimizing or eliminating the need for and cost of new TEM data and enabling accelerated time to solution, faster excursion detection, reduced cost and improved Cpk.

Enhancing CMP Process Control with Intelligent Line Monitoring & Integrated Metrology
As semiconductor manufacturers push the boundaries of performance and functionality—driven by high-performance computing and AI applications—chemical mechanical planarization (CMP) processes increase in intensity complexity. New logic transistor designs, 3D NAND stacking, and DRAM integration introduce more CMP layers and tighter process windows.

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