The Element S system is designed for the specialty market, specifically the smaller 100mm to 200mm wafer sizes used in the rapidly growing Si/SiC/GaN power device market. Building on the success of the Element Fourier transform infrared (FTIR) system, the Element S system can accurately measure thickness and free carrier concentrations in epitaxial layers up to five layers. This capability is essential for characterizing the thick epitaxial films required for next generation SiC power devices, which need thick epi layers for higher standoff voltage.

With its small spot size, the Element S system can conduct measurements up to the very edge of the wafer, maximizing die yield and enhancing productivity as power device customers transition to 200mm wafers. With improved sensitivity, an advanced multi-layer epi algorithm, and leading-edge multiple IR peak modeling, the Element S system provides critical and versatile capabilities for wafer and device makers in epi and film composition monitoring.

The Element G2 system is designed for wafer suppliers to perform high speed impurity mapping and epi thickness measurements. It combines transmission and reflection-based technology and when paired with advanced IR modeling capability, it offers a unique approach to dielectric composition and film thickness monitoring. With improved sensitivity and cutting-edge algorithms, the Element G2 system is a critical metrology tool widely used for monitoring dielectrics such as BPSG, FSG, H in SiN, and more. Machine learning helps eliminate the need for monitor wafers in dielectric measurement.

The system features a crisp 2mm circular IR spot, a high sensitivity interferometer and advanced pattern recognition. Equipped with a Class 1, five-axis dual-arm edge grip wafer handling system, the Element G2 system delivers high precision and high throughput, even at the edge of the wafer.

The Echo system is a comprehensive in-line metal film metrology tool designed for single and multi-layer metal film measurements in leading-edge logic, memory, advanced packaging and specialty semiconductor devices. Its innovative optics design extends the dynamic range for film thickness measurement from 50Å to 35µm on a single platform and offers extendibility to measure high aspect ratio advanced 3D NAND structures. The Expert Applications System (EASy™) software provides flexibility for developing user-defined algorithms to model complex multi-layer stacks.

The Echo system’s capabilities have been extended to include materials characterization. In addition to measuring the Young’s Modulus of low-k dielectric films in BEOL and amorphous carbon hard masks in 3D NAND, the Echo system includes proprietary electronics and algorithms for implant monitoring and thermal conductivity characterization. Its small spot size, combined with rapid measurements, enables full wafer mapping capabilities with 0.5mm edge exclusion, improving time to yield.

The Atlas III+ system is a widely adopted inline OCD metrology system, known for its robust and reliable solutions across all OCD and film layers from FEOL to BEOL. With its information-rich optical architecture, powerful OCD and machine learning analysis engine, the Atlas III+ system excels in advanced logic, 3D NAND and DRAM device processes. Extending metrology performance to sub-angstrom precision and accuracy levels, this system enables advanced process control across a broad range of applications in high volume manufacturing. The Atlas III+ system incorporates a proprietary spectroscopic reflectometry and spectroscopic ellipsometry solution, and when combined with Onto Innovation’s Ai Diffract™ OCD analysis software, it enables process control of every critical manufacturing unit operation. Users can gain insights into complex structure profiles across etch, clean, deposition and CMP steps.

The Atlas V system combines state of the art optical design with an innovative Ai Diffract^™ modeling engine, providing OCD and thin film metrology solutions for measuring complex 3D device structures. The dual channel optical architecture consists of a DUV 4×4 Mueller Matrix (MM) SE and a DUV polarized normal incident reflectometer (NIOCD). Together, they provide rich information for OCD analysis at high precision and high throughput. The Atlas V system is designed to measure the most critical and challenging process steps that include buried features, not visible by CD-SEM and other techniques.

With unique capabilities, such as measuring individual nanowire dimension in a GAA logic device, the Atlas V system is an enabling technology for leading edge device process control.

As the semiconductor industry relentlessly pursues density and power scaling, more and more high aspect ratio (HAR) processes are used across multiple device segments, especially in advanced memory such as 3D NAND and 3D DRAM. The Aspect metrology system was designed with these ongoing architectures and scaling strategies in mind. Aspect metrology has demonstrated superior performance across multiple customer devices through a unique proprietary IRCD system that provides full profiling capability to enable critical process control, with the speed and process coverage that customers require.

The Aspect system is powered by a software analysis engine, Ai Diffract™, that provides up to 90% faster time to solution which extends the industry leading NanoDiffract^® software by leveraging extensive machine learning capabilities along with high fidelity modeling. The result is a simultaneous improvement in metrology performance along with a significant time to solution reduction.