If you’ve been following the evolution of advanced packaging, you know that the industry is pushing boundaries like never before. From high-performance computing to industry-upending AI devices, the demand for smaller, faster, and more powerful chips is driving innovation at every level.
The IMPULSE V system helps to advance CMP processing with enhanced wavefront technology and AI-driven analytics, delivering over 2X precision improvement and faster solutions, crucial for next-gen semiconductor manufacturing demands.
As wafer uniformity requirements tighten and vertical scaling increases, the need for CMP processing grows across market segments. Logic introduces new transistor designs and materials, DRAM incorporates new materials and process steps to planarize, and 3D NAND adds more decks, stacks and tiers.
The IMPULSE V system, available as an integrated or standalone platform, enhances film measurement fidelity and productivity for the CMP process module. With deep ultraviolet (DUV) optics and AI-driven machine analytics derived from our Atlas® platform, it works in conjunction with the Atlas® platform to provide CMP process engineers the capability to manage excursions and drive process improvement (Cpk.).
Advanced wavefront technology suppresses previous layer noise in complex structures. It provides feedback to improve long term repeatability. Designed for higher sampling, in-die/on-device and wafer edge measurements, the system offers improved reliability, higher throughput and over 2X precision improvement compared to the previous generation. Onboard AI-driven machine learning uses a signal-to-noise ratio for faster time-to-solution, addressing layers that were previously challenging to measure.
Enhance CMP process control with a connected metrology approach that feeds forward data from standalone OCD or films metrology to integrated metrology, connected through AI-driven analytical software. This approach, powered by advanced modeling and analysis tools, can deliver high-precision, high-throughput results—minimizing or eliminating the need for and cost of new TEM data and enabling accelerated time to solution, faster excursion detection, reduced cost and improved Cpk.
As semiconductor manufacturers push the boundaries of performance and functionality—driven by high-performance computing and AI applications—chemical mechanical planarization (CMP) processes increase in intensity complexity. New logic transistor designs, 3D NAND stacking, and DRAM integration introduce more CMP layers and tighter process windows.
The IMPULSE V system helps to advance CMP processing with enhanced wavefront technology and AI-driven analytics, delivering over 2X precision improvement and faster solutions, crucial for next-gen semiconductor manufacturing demands.
The IMPULSE+ system is designed to deliver film measurement, fidelity and productivity in the CMP process module. Available as an integrated or standalone platform, it offers high sensitivity and accuracy.
The Atlas V system is an OCD and thin film metrology tool for high volume manufacturing, enabling FinFET & Gate-All-Around (GAA) logic, DRAM, and 3D NAND device process control.
The Atlas III+ system provides dependable OCD and thin film metrology for established technologies, with flexible performance across a wide range of process layers and device types.
The Iris S system is a versatile platform solution for the advanced packaging and specialty market, supporting 150mm, 200mm and 300mm wafers. It provides thin and thick film, OCD and wafer bow and film stress measurements.
The Iris G2 system is an advanced optical metrology tool for both common and critical thin films for advanced node, mature and specialty devices, enabling manufacturers to increase transistor speed, reduce power consumption and improve reliability.
A suite of OCD modeling software and computing hardware that enables the full capability and connectivity across all Onto OCD and thin film metrology systems, including Atlas, Aspect, Iris and IMPULSE systems.
Hybrid bonding enables ultra-dense 3D memory interconnects with up to 1,000x more connections than microbumps. Achieving high yield requires stringent process control, including monitoring topography and detecting particles, cracks and voids. Measuring dishing in copper pads provides valuable insight into surface conditions. Together, these process control insights contribute to improved device reliability and performance.
As demand grows for high-performance computing (HPC) and AI-driven applications, manufacturers are turning to hybrid bonding to enable the ultra-dense 3D integration required for next-generation chip architectures. This advanced packaging technology presents significant process challenges. Surface preparation must be precisely controlled to eliminate particles, excess recess, and copper pad dishing, all of which can compromise bond quality. During pre-annealing, particle-induced gaps and wide bonding gaps can prevent proper wafer contact. Post-annealing, the formation of dielectric and metal voids introduces further risks to electrical performance and long-term reliability.
The Iris S system is a versatile platform solution for the advanced packaging and specialty market, supporting 150mm, 200mm and 300mm wafers. It provides thin and thick film, OCD and wafer bow and film stress measurements.
The IMPULSE V system helps to advance CMP processing with enhanced wavefront technology and AI-driven analytics, delivering over 2X precision improvement and faster solutions, crucial for next-gen semiconductor manufacturing demands.
The Dragonfly G3 system is resetting the industry’s expectations for throughput, accuracy and reliability. Combining 2D and 3D technologies, the system detects yield-robbing defects and measures features critical for today’s front-end and packaging technologies.
The Aspect System is a revolutionary in-line, non-destructive infrared optical critical dimension (IRCD) system measuring Z-dimension profiling of high aspect ratio structures to enable critical process control. It meets the needs of leading-edge customers with its high speed and process coverage.
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The Element S system offers a unique combination of transmission and reflection-based technology, making it a valuable tool for dielectric monitoring.
The Element S system is designed for the specialty market, specifically the smaller 100mm to 200mm wafer sizes used in the rapidly growing Si/SiC/GaN power device market. Building on the success of the Element Fourier transform infrared (FTIR) system, the Element S system can accurately measure thickness and free carrier concentrations in epitaxial layers up to five layers. This capability is essential for characterizing the thick epitaxial films required for next generation SiC power devices, which need thick epi layers for higher standoff voltage.
With its small spot size, the Element S system can conduct measurements up to the very edge of the wafer, maximizing die yield and enhancing productivity as power device customers transition to 200mm wafers. With improved sensitivity, an advanced multi-layer epi algorithm, and leading-edge multiple IR peak modeling, the Element S system provides critical and versatile capabilities for wafer and device makers in epi and film composition monitoring.
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The Element G2 system is a high-speed epitaxial layer metrology and wafer/film composition control system for wafer makers, advanced logic, DRAM and 3D NAND.
The Element G2 system is designed for wafer suppliers to perform high speed impurity mapping and epi thickness measurements. It combines transmission and reflection-based technology and when paired with advanced IR modeling capability, it offers a unique approach to dielectric composition and film thickness monitoring. With improved sensitivity and cutting-edge algorithms, the Element G2 system is a critical metrology tool widely used for monitoring dielectrics such as BPSG, FSG, H in SiN, and more. Machine learning helps eliminate the need for monitor wafers in dielectric measurement.
The system features a crisp 2mm circular IR spot, a high sensitivity interferometer and advanced pattern recognition. Equipped with a Class 1, five-axis dual-arm edge grip wafer handling system, the Element G2 system delivers high precision and high throughput, even at the edge of the wafer.
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The NSX 330 system offers advanced macro inspection for a wide range of defect sizes at high throughput, with optional 3D metrology integration.
The NSX 330 system features robust platform technology with high-acceleration staging, high-speed multi-processor computing and flexible software. With over 1,000 installation worldwide, the NSX 330 System offers 2D inspection and metrology at high throughput and a broad portfolio of 3D sensors supporting critical advanced packaging applications. These include wafer-level metrology for micro bumps, RDL, kerf, overlay, and through silicon via (TSV) in a single wafer load.
Accommodating wafers from 100mm to 330mm, the system features a versatile objective turret, programmable light tower, and multiple dark field illumination modes. Additional features include resolution flexibility, unique handling solutions, and comprehensive software for recipe sharing and offline analysis. The NSX 330 system, with optional edge and backside inspection via the EB40 module, provides a comprehensive all-surface inspection solution packaging technology challenges.
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The F30 system is designed to blur the lines between dark field micro inspection and traditional macro inspection, providing automated defect inspection for front-end and outgoing quality (OQA) applications.
The F30 automated defect inspection system combines high resolution and throughput to drive fab yield and productivity. A five-objective turret enables resolution-throughput flexibility, while its multi-channel illumination including brightfield, darkfield, high-angle ring light, and IR-Review addresses the requirements for today’s multi-process inspection applications. Equipped with an advanced productivity suite (waferless recipe creation, simultaneous FOUP, recipe server and tool matching), the F30 System redefines inspection cost of ownership expectations. The system can handle 100mm – 300mm wafers can be paired with the edge and backside module (EB40) to provide an all-surface inspection solution.
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The Celero PL system is designed for subsurface defect inspection and classification for silicon carbide (SiC) and gallium nitride (GaN) based wafers and compound semiconductor materials.
The Celero PL system utilizes a laser-based phase detection and imaging capability that leverages custom optics and image processing algorithms to enable best in class throughput and sensitivity for silicon carbide and gallium nitride-based materials on 100mm to 300mm wafer sizes. Leveraging multiple light sources and sensor channels, the system can detect, measure and image a broad variety of subsurface crystalline defects, associated with bulk wafers and epitaxial layers, surface particles, scratches, pits, surface contamination, stains, point or bulk wafer stress, voids/inclusions, including chips and cracks at the edge of the wafer.
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