Discover® AI Software
Discover AI software leverages high-quality data input to provide valuable insights into processes and actionable predictions for process, yield and efficiency improvements through integration with the Discover data platform.
Product Overview
Discover AI software is a disruptive technology that reshapes the way we approach manufacturing line control and yield analysis. It leverages the latest in machine learning and artificial intelligence to identify actionable improvements and connections in data that a human could not. The software’s optimization engine adds a powerful machine learning analytical method to an already sophisticated toolbox of process improvement applications.
By analyzing any set of conceivable inputs and outputs, Discover AI software identifies relationships and interactions that lead to positive operational changes. Easily understood visuals empower even casual users to understand what is important before making adjustments.
Discover AI software evaluates multiple models and suggests the optimal one for the data. Using machine learning, it examines interactions between in-process inputs and results for any semiconductor product family and recommends changes to in-process targets. Licensed as a service, it enables users to leverage an on-demand infrastructure to apply easily understood workflows for complex analytics without the overhead.
Applications
- Yield Optimization
- Virtual Metrology
- Process prediction & tuning
- Embedded AI – process digital twin
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IMPULSE®+ System
The IMPULSE+ system is designed to deliver film measurement, fidelity and productivity in the CMP process module. Available as an integrated or standalone platform, it offers high sensitivity and accuracy.
Product Overview
An integrated metrology standard, the IMPULSE+ system offers high sensitivity and accuracy to CMP process excursions and enables device makers to establish APC control with high-accuracy feedback. The IMPULSE+ system works in conjunction with the Atlas® platform, facilitating cross-module process optimization and comprehensive fab-wide process control.
Based on a common optical design derived from our stand-alone Atlas® platform, the IMPULSE+ system shares superior deep ultraviolet (DUV) optics. This unique ecosystem can be leveraged to improve signal to noise ratio by applying spectra feedforward from the Atlas platform, further enhanced by AI-driven machine analytics. This combination affords CMP process engineers a potent arsenal of capability to manage excursions and drive process improvement (Cpk.).
The IMPULSE+ system is widely adopted across key steps in DRAM, 3D-NAND, CMOS image sensor and foundry/logic device manufacturing. challenging to measure.
Applications
- CMP
Intelligent Line Monitoring & Control with Integrated Metrology
Enhance CMP process control with a connected metrology approach that feeds forward data from standalone OCD or films metrology to integrated metrology, connected through AI-driven analytical software. This approach, powered by advanced modeling and analysis tools, can deliver high-precision, high-throughput results—minimizing or eliminating the need for and cost of new TEM data and enabling accelerated time to solution, faster excursion detection, reduced cost and improved Cpk.
Enhancing CMP Process Control with Intelligent Line Monitoring & Integrated Metrology
As semiconductor manufacturers push the boundaries of performance and functionality—driven by high-performance computing and AI applications—chemical mechanical planarization (CMP) processes increase in intensity complexity. New logic transistor designs, 3D NAND stacking, and DRAM integration introduce more CMP layers and tighter process windows.
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IMPULSE® V System
The IMPULSE V system helps to advance CMP processing with enhanced wavefront technology and AI-driven analytics, delivering over 2X precision improvement and faster solutions, crucial for next-gen semiconductor manufacturing demands.
Product Overview
As wafer uniformity requirements tighten and vertical scaling increases, the need for CMP processing grows across market segments. Logic introduces new transistor designs and materials, DRAM incorporates new materials and process steps to planarize, and 3D NAND adds more decks, stacks and tiers.
The IMPULSE V system, available as an integrated or standalone platform, enhances film measurement fidelity and productivity for the CMP process module. With deep ultraviolet (DUV) optics and AI-driven machine analytics derived from our Atlas® platform, it works in conjunction with the Atlas® platform to provide CMP process engineers the capability to manage excursions and drive process improvement (Cpk.).
Advanced wavefront technology suppresses previous layer noise in complex structures. It provides feedback to improve long term repeatability. Designed for higher sampling, in-die/on-device and wafer edge measurements, the system offers improved reliability, higher throughput and over 2X precision improvement compared to the previous generation. Onboard AI-driven machine learning uses a signal-to-noise ratio for faster time-to-solution, addressing layers that were previously challenging to measure.
Applications
- CMP
Intelligent Line Monitoring & Control with Integrated Metrology
Enhance CMP process control with a connected metrology approach that feeds forward data from standalone OCD or films metrology to integrated metrology, connected through AI-driven analytical software. This approach, powered by advanced modeling and analysis tools, can deliver high-precision, high-throughput results—minimizing or eliminating the need for and cost of new TEM data and enabling accelerated time to solution, faster excursion detection, reduced cost and improved Cpk.
Enhancing CMP Process Control with Intelligent Line Monitoring & Integrated Metrology
As semiconductor manufacturers push the boundaries of performance and functionality—driven by high-performance computing and AI applications—chemical mechanical planarization (CMP) processes increase in intensity complexity. New logic transistor designs, 3D NAND stacking, and DRAM integration introduce more CMP layers and tighter process windows.
Hybrid Bonding Process Control Solution
Hybrid bonding enables ultra-dense 3D memory interconnects with up to 1,000x more connections than microbumps. Achieving high yield requires stringent process control, including monitoring topography and detecting particles, cracks and voids. Measuring dishing in copper pads provides valuable insight into surface conditions. Together, these process control insights contribute to improved device reliability and performance.
Enabling In-Line Process Control for Hybrid Bonding Applications
As demand grows for high-performance computing (HPC) and AI-driven applications, manufacturers are turning to hybrid bonding to enable the ultra-dense 3D integration required for next-generation chip architectures. This advanced packaging technology presents significant process challenges. Surface preparation must be precisely controlled to eliminate particles, excess recess, and copper pad dishing, all of which can compromise bond quality. During pre-annealing, particle-induced gaps and wide bonding gaps can prevent proper wafer contact. Post-annealing, the formation of dielectric and metal voids introduces further risks to electrical performance and long-term reliability.
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Element™ S System
The Element S system offers a unique combination of transmission and reflection-based technology, making it a valuable tool for dielectric monitoring.
Product Overview
The Element S system is designed for the specialty market, specifically the smaller 100mm to 200mm wafer sizes used in the rapidly growing Si/SiC/GaN power device market. Building on the success of the Element Fourier transform infrared (FTIR) system, the Element S system can accurately measure thickness and free carrier concentrations in epitaxial layers up to five layers. This capability is essential for characterizing the thick epitaxial films required for next generation SiC power devices, which need thick epi layers for higher standoff voltage.
With its small spot size, the Element S system can conduct measurements up to the very edge of the wafer, maximizing die yield and enhancing productivity as power device customers transition to 200mm wafers. With improved sensitivity, an advanced multi-layer epi algorithm, and leading-edge multiple IR peak modeling, the Element S system provides critical and versatile capabilities for wafer and device makers in epi and film composition monitoring.
Applications
- Multi layer Epi layer, transition zone thickness and substrate concentration
- Power device EPI and buffer layer
- BPSG, FSG, SiN, HSQ, SiON, SiCN, SiOC
- Multiple IR peak metrics
- Interstitial oxygen and substitutional carbon
- Oxygen dose and Oxygen precipitate
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Element™ G2 System
The Element G2 system is a high-speed epitaxial layer metrology and wafer/film composition control system for wafer makers, advanced logic, DRAM and 3D NAND.
Product Overview
The Element G2 system is designed for wafer suppliers to perform high speed impurity mapping and epi thickness measurements. It combines transmission and reflection-based technology and when paired with advanced IR modeling capability, it offers a unique approach to dielectric composition and film thickness monitoring. With improved sensitivity and cutting-edge algorithms, the Element G2 system is a critical metrology tool widely used for monitoring dielectrics such as BPSG, FSG, H in SiN, and more. Machine learning helps eliminate the need for monitor wafers in dielectric measurement.
The system features a crisp 2mm circular IR spot, a high sensitivity interferometer and advanced pattern recognition. Equipped with a Class 1, five-axis dual-arm edge grip wafer handling system, the Element G2 system delivers high precision and high throughput, even at the edge of the wafer.
Applications
- Multi layer Epi layer, transition zone thickness and substrate concentration
- Power device EPI and buffer layer
- BPSG, FSG, SiN, HSQ, SiON, SiCN, SiOC
- Multiple IR peak metrics
- Interstitial oxygen and substitutional carbon
- Oxygen dose and Oxygen precipitate
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NSX® 330 System
The NSX 330 system offers advanced macro inspection for a wide range of defect sizes at high throughput, with optional 3D metrology integration.
Product Overview
The NSX 330 system features robust platform technology with high-acceleration staging, high-speed multi-processor computing and flexible software. With over 1,000 installation worldwide, the NSX 330 System offers 2D inspection and metrology at high throughput and a broad portfolio of 3D sensors supporting critical advanced packaging applications. These include wafer-level metrology for micro bumps, RDL, kerf, overlay, and through silicon via (TSV) in a single wafer load.
Accommodating wafers from 100mm to 330mm, the system features a versatile objective turret, programmable light tower, and multiple dark field illumination modes. Additional features include resolution flexibility, unique handling solutions, and comprehensive software for recipe sharing and offline analysis. The NSX 330 system, with optional edge and backside inspection via the EB40 module, provides a comprehensive all-surface inspection solution packaging technology challenges.
Applications
- Macro inspection: whole wafer, and film frame
- Gel and waffle pack inspection
- OQA and post saw
- Post Probe and Testing
- Substrate thickness, TTV, and bonded wafer thickness stack thickness (carrier, adhesive, product wafer and total stack)
- Via depth thick and thin RST
- Bow and warp
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