The Element S system is designed for the specialty market, specifically the smaller 100mm to 200mm wafer sizes used in the rapidly growing Si/SiC/GaN power device market. Building on the success of the Element Fourier transform infrared (FTIR) system, the Element S system can accurately measure thickness and free carrier concentrations in epitaxial layers up to five layers. This capability is essential for characterizing the thick epitaxial films required for next generation SiC power devices, which need thick epi layers for higher standoff voltage.

With its small spot size, the Element S system can conduct measurements up to the very edge of the wafer, maximizing die yield and enhancing productivity as power device customers transition to 200mm wafers. With improved sensitivity, an advanced multi-layer epi algorithm, and leading-edge multiple IR peak modeling, the Element S system provides critical and versatile capabilities for wafer and device makers in epi and film composition monitoring.

The Element G2 system is designed for wafer suppliers to perform high speed impurity mapping and epi thickness measurements. It combines transmission and reflection-based technology and when paired with advanced IR modeling capability, it offers a unique approach to dielectric composition and film thickness monitoring. With improved sensitivity and cutting-edge algorithms, the Element G2 system is a critical metrology tool widely used for monitoring dielectrics such as BPSG, FSG, H in SiN, and more. Machine learning helps eliminate the need for monitor wafers in dielectric measurement.

The system features a crisp 2mm circular IR spot, a high sensitivity interferometer and advanced pattern recognition. Equipped with a Class 1, five-axis dual-arm edge grip wafer handling system, the Element G2 system delivers high precision and high throughput, even at the edge of the wafer.

The NSX 330 system features robust platform technology with high-acceleration staging, high-speed multi-processor computing and flexible software. With over 1,000 installation worldwide, the NSX 330 System offers 2D inspection and metrology at high throughput and a broad portfolio of 3D sensors supporting critical advanced packaging applications. These include wafer-level metrology for micro bumps, RDL, kerf, overlay, and through silicon via (TSV) in a single wafer load.

Accommodating wafers from 100mm to 330mm, the system features a versatile objective turret, programmable light tower, and multiple dark field illumination modes. Additional features include resolution flexibility, unique handling solutions, and comprehensive software for recipe sharing and offline analysis. The NSX 330 system, with optional edge and backside inspection via the EB40 module, provides a comprehensive all-surface inspection solution packaging technology challenges.

The F30 automated defect inspection system combines high resolution and throughput to drive fab yield and productivity. A five-objective turret enables resolution-throughput flexibility, while its multi-channel illumination including brightfield, darkfield, high-angle ring light, and IR-Review addresses the requirements for today’s multi-process inspection applications. Equipped with an advanced productivity suite (waferless recipe creation, simultaneous FOUP, recipe server and tool matching), the F30 System redefines inspection cost of ownership expectations. The system can handle 100mm – 300mm wafers can be paired with the edge and backside module (EB40) to provide an all-surface inspection solution.

The Celero PL system utilizes a laser-based phase detection and imaging capability that leverages custom optics and image processing algorithms to enable best in class throughput and sensitivity for silicon carbide and gallium nitride-based materials on 100mm to 300mm wafer sizes. Leveraging multiple light sources and sensor channels, the system can detect, measure and image a broad variety of subsurface crystalline defects, associated with bulk wafers and epitaxial layers, surface particles, scratches, pits, surface contamination, stains, point or bulk wafer stress, voids/inclusions, including chips and cracks at the edge of the wafer.

The PrimaScan R&D system offers a smaller spot size and higher pixel resolution than its high volume production counterpart tools. The flexibility in sample handling options combined with the multiple sensing channels and higher resolution imaging makes this the ideal tool for R&D and lab environments. Similar to the other tools in the PrimaScan line, the PrimaScan R&D system offers reliable inspection of nanometer sized defects on a variety of opaque and transparent/semi-transparent substrates and samples suitable for either R&D or lab environments. The system can detect, measure, characterize and image surface particles, scratches, pits, bumps, surface contamination, film or bulk wafer stress, voids/inclusions, including chips and cracks at the wafer edge.

Designed with versatility in mind the PrimaScan R&D system can handle a variety of wafer sizes and substrate types including film frame, photomask and sample tray.