PrimaScan™ System

The PrimaScan wafer defect inspection system delivers a flexible, high sensitivity solution at the lowest cost of ownership per pass.

PrimaScan System

Product Overview

The PrimaScan system utilizes laser scatterometry and imaging techniques leveraging proprietary optics and sensing technologies for reliable inspection of nanometer sized defects on a variety of opaque and transparent/semi-transparent substrates suitable for either R&D or high-volume manufacturing environments. With multiple detection channels, the system can detect, measure, characterize and image surface particles, scratches, pits, bumps, surface contamination, film or bulk wafer stress, voids/inclusions, including chips and cracks at the wafer edge.

The PrimaScan system addresses challenges in both incoming wafer quality control and in inline process monitoring. Capable of handling multiple substrate materials, it uniquely addresses inline process defect and contamination monitoring in wafer-based production environments.

Designed with versatility in mind the PrimaScan system can handle a variety of wafer sizes and substrate types

Applications

  • Opaque or transparent wafer incoming quality (ICQ) inspection
  • Process monitor wafer particle and contamination inspection
  • Unpatterned blanket photoresist, dielectric or metallic coated wafer defect inspection
  • Subsurface defectivity inspection for transparent and semi-transparent films and substrates
  • Glass carrier wafer defect and contamination inspection for advanced packaging
  • Glass wafer defect and contamination inspection for microfluidics, microlens arrays for AR/VR/MR, flat optics, etc.
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PrimaScan™ P System

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PrimaScan™ R&D System

All-surface defect and contamination inspection for unpatterned wafer and blanket films, with imaging capability for opaque, transparent and semi-transparent wafers, reticles and piece parts.
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IVS 380 System

The IVS 380 System delivers overlay, CD and z-height metrology for advanced packaging, power, compound semi and MEMS, offering world class performance and flexibility to accommodate substrates of different sizes and thickness without hardware changes.

IVS 380 System

Product Overview

The IVS 380 is an optical overlay, CD & z-height metrology system designed for high volume manufacturing, with SMIF (200mm substrate) or FOUP (300mm substrate) load ports compatibility. It handles various substrates for advanced packaging, including Si, glass and CCL, and accommodates sizes of 200mm and 300mm.

Building on the IVS family’s 40 years of experience in CMOS, MEMS and compound semiconductor applications, the IVS 380 system possesses the versatility to tackle overlay, CD and z-height measurements for diverse substrates and layers. It measures critical dimensions in the xy plane and the vertical z-heights of features like RDL metal lines, posts and bumps. The optics enable focus on mostly transparent materials such as photoresists and rough surfaces such as electroplated copper.

Applications

  • Critical Dimension
  • On Product Overlay
  • Specialty

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IVS 280 System

Overlay, CD and height metrology for 100mm-200mm wafers in the compound semiconductor, power devices, RF, MEMS and LED markets.
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Iris™ S System

The Iris S system is a versatile platform solution for the advanced packaging and specialty market, supporting 150mm, 200mm and 300mm wafers. It provides thin and thick film, OCD and wafer bow and film stress measurements.

Iris-S-300mm-NEWBRAND

Product Overview

The Iris S system delivers films metrology and advanced OCD capabilities for the specialty and advanced packaging segments. With a small footprint, it handles 150mm, 200mm, and 300mm wafer sizes, including thin, thick and bonded wafers. The system supports various materials such as Si, SiC, GaN and glass, addressing device-level challenges impacting performance and yield. Leveraging Onto’s Ai Diffract software, the Iris S system supports the most difficult on-wafer high value problems.

The Iris S system includes a dual-arm robot, high-precision stage, advanced pattern recognition, and high-speed focus for accurate positioning at high throughput. The dual channel optical architecture offers oblique incidence Mueller Matrix spectroscopic ellipsometry (MMSE) and normal incidence spectroscopic reflectometry (SR) in a broad wavelength range from UV to IR.

Based on Windows 10 OS and a 64-bit architecture, the Ai Diffract™ software interface and automation comply with SEMI standards. Onto’s model guided machine learning enables fast, flexible and robust film and OCD recipe setup.

Applications

  • Thin, thick and ultra thick film thickness
  • Trench/OCD metrology capabilities
  • Optical properties and composition solutions
  • Configurable for 6”, 8” and 12” wafer sizes
  • High warped wafer handling and stress measurements
  • Si, SiC, GaN and glass wafer handling
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Iris™ G2 System

A high throughput common and critical thin film optical system for advanced and mature node devices.
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IMPULSE® V System

Advanced high throughput integrated metrology system with AI-driven machine learning option. The system offers maximum sensitivity and accuracy to CMP process excursions and enables process engineers to establish APC control with high-accuracy feedback.
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IMPULSE®+ System

Integrated metrology system offering maximum sensitivity and accuracy to CMP process excursions and enabling process engineers to establish APC control with high-accuracy feedback.
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Atlas® V System

High performance OCD and thin film metrology for advanced GAA and memory devices.
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Atlas® III+ System

Versatile OCD and thin film metrology for mature and mainstream nodes.
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IMPULSE®+ System

The IMPULSE+ system is designed to deliver film measurement, fidelity and productivity in the CMP process module. Available as an integrated or standalone platform, it offers high sensitivity and accuracy.

IMPULSE®+ System

Product Overview

An integrated metrology standard, the IMPULSE+ system offers high sensitivity and accuracy to CMP process excursions and enables device makers to establish APC control with high-accuracy feedback. The IMPULSE+ system works in conjunction with the Atlas® platform, facilitating cross-module process optimization and comprehensive fab-wide process control.

Based on a common optical design derived from our stand-alone Atlas® platform, the IMPULSE+ system shares superior deep ultraviolet (DUV) optics. This unique ecosystem can be leveraged to improve signal to noise ratio by applying spectra feedforward from the Atlas platform, further enhanced by AI-driven machine analytics. This combination affords CMP process engineers a potent arsenal of capability to manage excursions and drive process improvement (Cpk.).

The IMPULSE+ system is widely adopted across key steps in DRAM, 3D-NAND, CMOS image sensor and foundry/logic device manufacturing. challenging to measure.

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IMPULSE® V System

Advanced high throughput integrated metrology system with AI-driven machine learning option. The system offers maximum sensitivity and accuracy to CMP process excursions and enables process engineers to establish APC control with high-accuracy feedback.
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IMPULSE® V System

The IMPULSE V system helps to advance CMP processing with enhanced wavefront technology and AI-driven analytics, delivering over 2X precision improvement and faster solutions, crucial for next-gen semiconductor manufacturing demands.

IMPULSE-sm

Product Overview

As wafer uniformity requirements tighten and vertical scaling increases, the need for CMP processing grows across market segments. Logic introduces new transistor designs and materials, DRAM incorporates new materials and process steps to planarize, and 3D NAND adds more decks, stacks and tiers.

The IMPULSE V system, available as an integrated or standalone platform, enhances film measurement fidelity and productivity for the CMP process module. With deep ultraviolet (DUV) optics and AI-driven machine analytics derived from our Atlas® platform, it works in conjunction with the Atlas® platform to provide CMP process engineers the capability to manage excursions and drive process improvement (Cpk.).

Advanced wavefront technology suppresses previous layer noise in complex structures. It provides feedback to improve long term repeatability. Designed for higher sampling, in-die/on-device and wafer edge measurements, the system offers improved reliability, higher throughput and over 2X precision improvement compared to the previous generation. Onboard AI-driven machine learning uses a signal-to-noise ratio for faster time-to-solution, addressing layers that were previously challenging to measure.

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Element™ S System

The Element S system offers a unique combination of transmission and reflection-based technology, making it a valuable tool for dielectric monitoring.

Element™ S System

Product Overview

The Element S system is designed for the specialty market, specifically the smaller 100mm to 200mm wafer sizes used in the rapidly growing Si/SiC/GaN power device market. Building on the success of the Element Fourier transform infrared (FTIR) system, the Element S system can accurately measure thickness and free carrier concentrations in epitaxial layers up to five layers. This capability is essential for characterizing the thick epitaxial films required for next generation SiC power devices, which need thick epi layers for higher standoff voltage.

With its small spot size, the Element S system can conduct measurements up to the very edge of the wafer, maximizing die yield and enhancing productivity as power device customers transition to 200mm wafers. With improved sensitivity, an advanced multi-layer epi algorithm, and leading-edge multiple IR peak modeling, the Element S system provides critical and versatile capabilities for wafer and device makers in epi and film composition monitoring.

Applications

  • Multi layer Epi layer, transition zone thickness and substrate concentration
  • Power device EPI and buffer layer
  • BPSG, FSG, SiN, HSQ, SiON, SiCN, SiOC
  • Multiple IR peak metrics
  • Interstitial oxygen and substitutional carbon
  • Oxygen dose and Oxygen precipitate
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Element™ G2 System

Transmission and reflection combined FTIR measurement for advanced epi thickness, film composition control and advanced IR modeling.
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Iris™ S System

All-in-one solution for film metrology, OCD and stress measurements, tailored for advanced packaging and specialty segments.
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Aspect S System 

Advanced model-based infrared reflectometry (MBIR) metrology system for in-line monitoring of 3D structures used in V-NAND, CIS and power devices, as well as carbon hardmasks, dielectric compositions and epitaxial layer stacks.
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Do you have an Element S system question? Let’s talk!

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