Specialty devices are the unsung heroes of modern life. For many in the semiconductor industry today, the spotlight is on the SiC and GaN power devices used in automotive, green energy, fast-charge consumer electronics (CE), and high-performance computing (HPC) applications (Figures 1 and 2).
However, specialty devices are more than just power devices. They are a broad class of semiconductor components delivering a variety of functions across multiple industry segments, including microelectromechanical systems (MEMS) in automobiles and CE to radio frequency (RF) filters for 5G/6G communications.

Figure1: Planar SiC MOSFET and trench SiC MOSFET

Figure 2: Vertical GaN and GaN on Si high electron mobility transistor (HEMT)
Photonics are another type of specialty device making industry waves. Previously viewed as something of a dark horse in the specialty sphere, photonics have made a comeback. Today, photonics are being used for 3D sensing in multiple CE applications such as smartphone user verification and 3D imaging, automotive applications in which scanning lasers are used in advanced driver assistance systems (ADAS); and telecommunications applications where photonics have long been used as optical transceivers supporting the conversion of copper wiring to optical fiber communications in data centers. While these applications and others exist for photonics, the killer photonics application is shaping up to be co-packaged optics (CPO), which enables optical communications directly from packaged XPU devices supporting AI applications.
When it comes to the broad category of specialty devices, nearly all of them are either manufactured on or previously manufactured on 150mm or 200mm wafers. However, specialty devices are moving to larger wafer sizes, either 200mm or 300mm depending on device type.
With many specialty devices scaling to larger wafer sizes, the semiconductor industry faces new challenges in process control. After all, specialty devices are known for delivering specialized features or capabilities based on a unique process step or material that often requires a customized inspection and metrology solution.
To optimize the manufacturing process, real-time process control —powered by data analytics and software —has become an indispensable requirement in specialty device fabrication. To scale specialty technologies for high-volume manufacturing, manufacturers need integrated solutions and specialty-focused platforms offering flexibility, precision, and automation across multiple wafer sizes.
In this three-part blog series, we will begin by discussing one of the most important trends in specialty devices, the transition to larger wafer sizes and what this means for specific devices. The following blogs will focus on the challenges facing the manufacturing of specialty devices and the solutions addressing these challenges.
From Niche Applications to Mainstream Products
Originally, specialty devices were referred to as More-than-Moore devices because the use of these devices went beyond the simple node scaling of traditional CMOS devices. They also were being enabled by one or more “specialty” materials or process steps. In fact, the semiconductor industry did not start using the term “specialty devices” until these devices transitioned from niche applications to mainstream products and high-volume production.
But what exactly are the benefits of these specialty materials? Let’s consider the case of specialty power devices.
The compound semiconductors used in power specialty devices, SiC and GaN, can handle high voltages more efficiently than traditional Si. They provide the ability to switch high voltages in increasingly smaller areas and at higher speeds than their silicon-based counterparts. They do this without the elaborate cooling that would otherwise be required. As these materials scale to larger wafer sizes, they necessitate upgrades in wafer fabrication equipment, inspection, and metrology tools.
Transitioning Wafer Sizes
Specialty devices have long been the domain of 150mm and 200mm wafers, with CMOS image sensors (CIS) and power management devices being the exception. That’s all changing.
On the compound semiconductor front, the high demand for GaN-based high-power, fast-switching technologies is motivating a wafer size transition from 200mm to 300mm while SiC power devices are transitioning from 150mm to 200mm in high-volume manufacturing. In addition, photonics technologies now span wafer sizes of 150mm to 300mm, and MEMS devices are offered at 300mm.
As more specialty device technologies move into high-volume manufacturing, we can expect to see a greater demand for 300mm silicon, glass, and compound semiconductor-based wafer applications. However, this transition to larger wafer sizes introduces unique challenges for each specialty device type. These devices and their challenges include:
MEMS: Larger substrates and diverse materials (Si, glass, thick metals) require tighter process control of etch depth and CD, feature height across bowed or warped wafers, and surface roughness.
SiC Power: As SiC power moves to 200mm, inspection and metrology must expand sampling, deal with increased crystal defects, and support device architecture transitions profiling complex trench MOSFETs (e.g., top/bottom CD) without killing throughput. Insufficient sampling on larger wafers creates blind spots that hurt yield and cost of ownership.
GaN Power: Moving GaN to 300mm wafers increases within-wafer variation, requiring more measurement points and precise control of trench/HEMT critical dimensions to maintain uniform performance, while dealing with increasingly brittle and bowed or warped materials.
Photonics and CPO: Co-packaged optics require metrology tools designed for die-to-die and wafer bonding (voids, Cu dishing, film variation), sub‑micron alignment, and warpage, which affects optical coupling on larger wafers and multi‑die assemblies.
CIS: CIS stacks drive high sampling density for overlay and CD uniformity. These stacks require integrated chemical mechanical planarization metrology and analytical tools to catch excursions quickly as die counts and wafer diameters increase.
To meet these challenges and others, manufacturers need upgraded metrology and inspection tools, many of which will come from suppliers with a long-standing relationship with specialty technologies. These suppliers are best prepared to meet the wafer handling, on-wafer materials, and cost-of-ownership requirements that have become synonymous with the specialty device markets.
Conclusion
The emergence of specialty devices as a vibrant market of their own is driven by the increasing complexity and functionality of end products. Even in mature markets, such as smartphone and automotive, manufacturers continue to innovate by adding new features, which, in turn, fuels demand for additional specialty devices.
In our next blog, we will further explore the many challenges facing each type of specialty device. We hope you join us as we discuss those challenges and, in part three of our series, the solutions that are available in the specialty space today.
Christopher Haire is a marketing content specialist at Onto Innovation and a former business journalist.
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Dragonfly® G5 System
The Dragonfly G5 system is engineered for inline process control of leading-edge advanced packaging technologies. As the latest generation pattern inspection system in the Dragonfly series, it delivers unparalleled accuracy in detecting submicron defects and performing high-resolution 3D measurements.
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Designed to meet the demands of advanced semiconductor technologies, the Dragonfly G5 system is purpose-built to deliver high-performance, reliable inspection and metrology across complex heterogeneous integration processes. Leveraging next generation high speed line scan 2D imaging and custom-engineered objectives, the system achieves over 3X throughput improvement compared to its predecessor, with submicron sensitivity down to 150nm.
Continuing the legacy of innovation, the Dragonfly G5 system introduces a multi-angle illumination channel that significantly improves signal-to-noise ratio for faint defect detection. Combined with powerful AI-driven algorithms, it enhances both the detectability and classification of critical, yield-impacting defects–empowering fabs to maintain quality and accelerate time-to-yield.
The Dragonfly G5 system expands process control flexibility for wafer-to-wafer and die-to-wafer bonding by integrating high-speed IR imaging to detect sub-surface defects. It incorporates the latest generation of 3Di™ technology, extending bump height metrology capabilities to support next-generation microbumps essential for 3D integration. This enables additional inspection and metrology touchpoints across increasingly complex packaging architectures.
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Hybrid Bonding Process Control Solution
Hybrid bonding enables ultra-dense 3D memory interconnects with up to 1,000x more connections than microbumps. Achieving high yield requires stringent process control, including monitoring topography and detecting particles, cracks and voids. Measuring dishing in copper pads provides valuable insight into surface conditions. Together, these process control insights contribute to improved device reliability and performance.
Enabling In-Line Process Control for Hybrid Bonding Applications
As demand grows for high-performance computing (HPC) and AI-driven applications, manufacturers are turning to hybrid bonding to enable the ultra-dense 3D integration required for next-generation chip architectures. This advanced packaging technology presents significant process challenges. Surface preparation must be precisely controlled to eliminate particles, excess recess, and copper pad dishing, all of which can compromise bond quality. During pre-annealing, particle-induced gaps and wide bonding gaps can prevent proper wafer contact. Post-annealing, the formation of dielectric and metal voids introduces further risks to electrical performance and long-term reliability.
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FAaST® CV/IV System
The FAaST system is a versatile, non-contact electrical metrology platform, with an option to combine micro and macro corona-Kelvin technologies together with digital surface photovoltage (SPV). It enables high-resolution dielectric and interface measurements across a wide range of dielectric materials, supporting both R&D and high volume manufacturing.
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The primary application of non-contact CV metrology is monitoring dielectric properties during IC manufacturing. Unlike conventional electrical measurements, it requires no sample preparation, eliminating the need for MOS capacitor structures. This reduces metrology cost and enables fast data feedback in both R&D and manufacturing environments.
The corona-Kelvin method uses a corona discharge in air to deposit an electric charge (DQC) on the wafer surface. A vibrating Kelvin-probe then measures the resulting surface voltage (V), enabling determination of the differential capacitance (C= DQC/DV). By monitoring surface voltage in both dark and illuminated conditions, the system separates two key components: dielectric voltage (VD) and semiconductor surface potential (VSB), enabling determination of flat band voltage (VFB).
Analysis of the resulting charge-voltage data yields electrical parameters, including trap density (Dit), flat band voltage (Vfb), dielectric charge (Qtot), dielectric capacitance (CD), Equivalent Oxide Thickness (EOT), leakage current, and tunneling characteristics.
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Aspect® S System
The Aspect S system is a revolutionary in-line, non-destructive model-based infrared reflectometry system that enables critical process control of high aspect ratio structures, films and epitaxial structures. It meets the needs of leading-edge customers with its high speed and process coverage.
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As more high aspect ratio processes are used in multiple industry segments, there are metrology needs for monitoring of related processes, including dimensions and properties of carbon film hard masks and etched 3D structures.
The Aspect S delivers high-throughput, low COO, non-contact, non-destructive measurements of dimensions and uniformity of layers and etched structures used in integrated circuit manufacturing. The small spot size makes the tool suitable for measurements of scribe line test structures as in-line process control. The unique technology and analysis capability simplifies system calibration requirements and removes the effect of substrate variations for key layer measurements.
While the software contains advanced features for measurement recipe and analysis model creation, it has a user-friendly interface and implementation that allows the fab customers to create and manage the recipe system for Aspect S tool fleets.

Thickness map from amorphous carbon film
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FAaST® Digital SPV System
The FAaST Digital SPV system provides a fast, non-contact, and preparation-free method for full wafer imaging of contamination in silicon. High resolution maps of diffusion length and iron (Fe) concentration are generated in minutes, setting the industry standard for precision and sensitivity in Fe contamination control, reaching the E7 cm-3 range.
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There is no disputing the detrimental effect of metallic contamination on the integrity of the critical gate oxide used in integrated circuits. During high temperature processing, contamination in the silicon wafer often precipitates at the Si/dielectric interface or segregates into the dielectric—both scenarios can cause premature device failure and reduced yield. As device dimensions shrink, the tolerance for contamination decreases, requiring ever-lower background levels of metals like iron (Fe). Over the past 25 years, the IC industry has reduced typical Fe concentrations by more than three orders of magnitude, yet further reduction is essential, especially for applications like CMOS image sensors.
The FAaST Digital SPV system addresses this challenge with industry-leading sensitivity and speed. It provides a fast, non-contact, and preparation-free method for full-wafer imaging of contamination. High-resolution maps of minority carrier diffusion length and Fe concentration are generated in minutes, enabling fabs to detect and control contamination at levels as low as the E7 cm⁻³ range.

Figure 1. Typical background Fe concentration in new IC Fablines (blue) and the state-of-the-art SPV detection limit (red)
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OCD Solutions
A suite of OCD modeling software and computing hardware that enables the full capability and connectivity across all Onto OCD and thin film metrology systems, including Atlas, Aspect, Iris and IMPULSE systems.
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Onto Innovation’s OCD technology offers powerful modeling and computing packages to support various phases of film and OCD measurement setup, data management, and fleet management. These capabilities include model building, runtime data analysis, system calibration, data analytics, data connectivity and management, spectrum management and fleet matching.
Onto OCD solutions consist of several modeling and computing components, including Ai Diffract™ modeling software, runtime onboard computer, offline modeler, offline model building clusters, and recipe & data management server. Each component seamlessly extends OCD capabilities to Onto’s standalone and integrated metrology systems, providing end-to-end capabilities from offline recipe support and development to fab-wide networking and connectivity for easy fleet management.
Learn more about each component below.
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Ai Diffract™ Software
AI-guided OCD modeling and analysis software for high accuracy in-line optical metrology and offline recipe development
Ai Diffract software is a powerful modeling, visualization and analysis software with an intuitive 3D modeling interface to simplify the building and visualization of today’s most complex semiconductor devices. It offers OCD modeling and advanced machine learning capabilities, next-generation real-time regression, offline sensitivity analysis tools and comprehensive GUI and structure input for true multi-variant modeling. Ai Diffract software’s proprietary fitting algorithms enable fast and accurate calculations for signal processing, helping ensure high fidelity model-based measurements. Automation features for spectral fitting, recipe optimization, and sensitivity analysis offer great user productivity. The first-in-market AI-guided engine synergizes physics-based modeling and machine learning to deliver the most robust solution with quick time to solution.
Ai Diffract Modeler is the offline analytical engine that allows users to create and edit recipes offline. It supports multiple users and can connect to Ai Diffract cluster for high intensity computing.
Ai Diffract Onboard is the on-tool runtime engine that maximizes tool throughput for complex use cases. It ensures rapid analysis without interfering with system operation or impacting throughput.
Ai Diffract Cluster is an enterprise scale computing server deployed for offline recipe development or in-line real-time regression. Optimized to support the workload of Ai Diffract software analysis, it scales based on fleet size, recipe numbers, and computing intensity.
Recipe Distribution Server (RDS) / Nexus Servers is a fab-wide networking and server system for fleet management and connectivity. RDS/Nexus servers provide connectivity and support to Ai Diffract recipe management and distribution, data/spectrum feed-forward and feedback, spectrum management, and fleet management.
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