Iris™ S System
The Iris S system is a versatile platform solution for the advanced packaging and specialty market, supporting 150mm, 200mm and 300mm wafers. It provides thin and thick film, OCD and wafer bow and film stress measurements.

Product Overview
The Iris S system delivers films metrology and advanced OCD capabilities for the specialty and advanced packaging segments. With a small footprint, it handles 150mm, 200mm, and 300mm wafer sizes, including thin, thick and bonded wafers. The system supports various materials such as Si, SiC, GaN and glass, addressing device-level challenges impacting performance and yield. Leveraging Onto’s Ai Diffract™ software, the Iris S system supports the most difficult on-wafer high value problems.
The Iris S system includes a dual-arm robot, high-precision stage, advanced pattern recognition, and high-speed focus for accurate positioning at high throughput. The dual channel optical architecture offers oblique incidence Mueller Matrix spectroscopic ellipsometry (MMSE) and normal incidence spectroscopic reflectometry (SR) in a broad wavelength range from UV to IR.
Based on Windows 10 OS and a 64-bit architecture, the Ai Diffract™ software interface and automation comply with SEMI standards. Onto’s model guided machine learning enables fast, flexible and robust film and OCD recipe setup.
Applications
- Thin, thick and ultra thick film thickness
- Trench/OCD metrology capabilities
- Optical properties and composition solutions
- Configurable for 6”, 8” and 12” wafer sizes
- High warped wafer handling and stress measurements
- Si, SiC, GaN and glass wafer handling
Featured Markets
Intelligent Line Monitoring & Control with Integrated Metrology
Enhance CMP process control with a connected metrology approach that feeds forward data from standalone OCD or films metrology to integrated metrology, connected through AI-driven analytical software. This approach, powered by advanced modeling and analysis tools, can deliver high-precision, high-throughput results—minimizing or eliminating the need for and cost of new TEM data and enabling accelerated time to solution, faster excursion detection, reduced cost and improved Cpk.

Enhancing CMP Process Control with Intelligent Line Monitoring & Integrated Metrology
As semiconductor manufacturers push the boundaries of performance and functionality—driven by high-performance computing and AI applications—chemical mechanical planarization (CMP) processes increase in intensity complexity. New logic transistor designs, 3D NAND stacking, and DRAM integration introduce more CMP layers and tighter process windows.
Hybrid Bonding Process Control Solution
Hybrid bonding enables ultra-dense 3D memory interconnects with up to 1,000x more connections than microbumps. Achieving high yield requires stringent process control, including monitoring topography and detecting particles, cracks and voids. Measuring dishing in copper pads provides valuable insight into surface conditions. Together, these process control insights contribute to improved device reliability and performance.

Enabling In-Line Process Control for Hybrid Bonding Applications
As demand grows for high-performance computing (HPC) and AI-driven applications, manufacturers are turning to hybrid bonding to enable the ultra-dense 3D integration required for next-generation chip architectures. This advanced packaging technology presents significant process challenges. Surface preparation must be precisely controlled to eliminate particles, excess recess, and copper pad dishing, all of which can compromise bond quality. During pre-annealing, particle-induced gaps and wide bonding gaps can prevent proper wafer contact. Post-annealing, the formation of dielectric and metal voids introduces further risks to electrical performance and long-term reliability.

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