Atlas® V System
The Atlas V system is an OCD and thin film metrology tool for high volume manufacturing, enabling FinFET & Gate-All-Around (GAA) logic, DRAM, and 3D NAND device process control.
Product Overview
The Atlas V system combines state of the art optical design with an innovative Ai Diffract™ modeling engine, providing OCD and thin film metrology solutions for measuring complex 3D device structures. The dual channel optical architecture consists of a DUV 4×4 Mueller Matrix (MM) SE and a DUV polarized normal incident reflectometer (NIOCD). Together, they provide rich information for OCD analysis at high precision and high throughput. The Atlas V system is designed to measure the most critical and challenging process steps that include buried features, not visible by CD-SEM and other techniques.
With unique capabilities, such as measuring individual nanowire dimension in a GAA logic device, the Atlas V system is an enabling technology for leading edge device process control.
Applications
- OCD for litho, etch, CVD & CMP process in all device segments
- Local variation
- Asymmetry and tilt
- Common and critical films
- Stress & wafer warpage
Intelligent Line Monitoring & Control with Integrated Metrology
Enhance CMP process control with a connected metrology approach that feeds forward data from standalone OCD or films metrology to integrated metrology, connected through AI-driven analytical software. This approach, powered by advanced modeling and analysis tools, can deliver high-precision, high-throughput results—minimizing or eliminating the need for and cost of new TEM data and enabling accelerated time to solution, faster excursion detection, reduced cost and improved Cpk.
Enhancing CMP Process Control with Intelligent Line Monitoring & Integrated Metrology
As semiconductor manufacturers push the boundaries of performance and functionality—driven by high-performance computing and AI applications—chemical mechanical planarization (CMP) processes increase in intensity complexity. New logic transistor designs, 3D NAND stacking, and DRAM integration introduce more CMP layers and tighter process windows.
IMPULSE® V System
The IMPULSE V system helps to advance CMP processing with enhanced wavefront technology and AI-driven analytics, delivering over 2X precision improvement and faster solutions, crucial for next-gen semiconductor manufacturing demands.
IMPULSE®+ System
The IMPULSE+ system is designed to deliver film measurement, fidelity and productivity in the CMP process module. Available as an integrated or standalone platform, it offers high sensitivity and accuracy.
Atlas® V System
The Atlas V system is an OCD and thin film metrology tool for high volume manufacturing, enabling FinFET & Gate-All-Around (GAA) logic, DRAM, and 3D NAND device process control.
Atlas® III+ System
The Atlas III+ system provides dependable OCD and thin film metrology for established technologies, with flexible performance across a wide range of process layers and device types.
Iris™ S System
The Iris S system is a versatile platform solution for the advanced packaging and specialty market, supporting 150mm, 200mm and 300mm wafers. It provides thin and thick film, OCD and wafer bow and film stress measurements.
Iris™ G2 System
The Iris G2 system is an advanced optical metrology tool for both common and critical thin films for advanced node, mature and specialty devices, enabling manufacturers to increase transistor speed, reduce power consumption and improve reliability.
OCD Solutions
A suite of OCD modeling software and computing hardware that enables the full capability and connectivity across all Onto OCD and thin film metrology systems, including Atlas, Aspect, Iris and IMPULSE systems.
Atlas® G6 System
Atlas® III+ System
IMPULSE® V System
IMPULSE®+ System
Aspect® System
OCD Solutions
Enhancing CMP Process Control with Intelligent Line Monitoring & Integrated Metrology
Non-destructive Metrology Techniques for Measuring Hole Profile in DRAM Storage Node
Optical Critical Dimension Metrology for Semiconductor Manufacturing
Metrology Solutions for Gate-All-Around Transistors in High Volume Manufacturing
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