Feb 23, 2021 Virtual

X-ray Critical Dimension Metrology Solution for High Aspect Ratio Semiconductor Structures

Bruker

Presentation at SPIE Advanced Lithography
12:00pm — 12:30pm

We have developed a novel in-line solution for the characterization and metrology of high-aspect ratio (HAR) semiconductor structures using transmission small-angle X-ray scattering (SAXS). The solution consists of the Sirius-XCD® tool, NanoDiffract for XCD (NDX) analysis software and high-performance computing infrastructure. The solution provides quantitative information on the orientation and shape of HAR structures, such as 3D NAND channel holes and DRAM capacitors, and can be used for development and control of the critical etch processes used in the formation of such structures. The tool has been designed to minimize expensive cleanroom space without sacrificing performance with typical measurements taking only a few minutes per site. The analysis is done using real-time regression in parallel to the measurements to maximize the throughput of the solution. We will illustrate the key features of the solution using data from a HAR reference wafer and provide results for hole shape and tilt across the wafer together with complimentary data from other techniques. We will also discuss future opportunities for both stand-alone XCD applications and possibilities of XCD-OCD synergies including hybrid metrology in solving complex high-aspect ratio (HAR) and other applications.