Feb 24, 2021 Virtual

Scatterometry of Nanowire/ Nanosheet FETs for Advanced Technology Nodes

SUNY

Presentation at SPIE Advanced Lithography
2:30pm — 3:00pm

Non-destructive inline characterization of sub-surface features fabricated for Gate-All-Around (GAA) nanowire/nanosheet FETs is extremely crucial for process control and for the manufacturing of reliable devices. The application of MMSE to successfully characterize the selective etching of the SiGe Nanosheets (cavity etch) has been successfully demonstrated. Here we highlight the characterization of the Nanowire Test Structures using CDSAXS. In this paper, we discuss the successful use of MMSE scatterometry to characterize a new sample set that includes selectively etched NWTS with different etch conditions and this sample after deposition of a dielectric around the entire structure.